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二维SiP2和h-BN复合结构光电晶体管及制备方法
Release Time:2024-09-01
  • Institution:
    晶体材料研究院（晶体材料全国重点实验室）
  • Type of Patent:
    Invent
  • Application Number:
    202210914216.3
  • Number of Inventors:
    2
  • Service Invention or Not:
    No
  • Application Date:
    2022-08-01
  • Publication Date:
    2024-08-23
  • Authorization Date:
    2024-08-23
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