BabPzaeEd0F7LaGn4tNFaDtMJ5CIoxkmSyp8CIFucdAVb1WKou88ReYdAusR
Current position: Home >> Scientific Research >> Paper Publications

Rectification magnetoresistance device: experimental realization and theoretical simulation

Hits:

Institution:物理学院

Title of Paper:Rectification magnetoresistance device: experimental realization and theoretical simulation

Journal:Appl. Phys. Lett.

First Author:田玉峰

All the Authors:Shishou Kang

Document Code:lw-179979

Volume:109

Issue:21

Page Number:213503

Translation or Not:No

Date of Publication:2016-11

Release Time:2019-04-14

Prev One:Decoupled scenario between the conductive carriers and the ferromagnetism in epitaxial Zn0.852xMgxCo0.15O thin films

Next One:Room temperature electrically tunable rectification magnetoresistance in Ge-based Schottky devices