location: Current position: Home >> Scientific Research >> Paper Publications

Rectification magnetoresistance device: experimental realization and theoretical simulation

Hits:

Affiliation of Author(s):物理学院

Journal:Appl. Phys. Lett.

All the Authors:Shishou Kang

First Author:tianyufeng

Indexed by:Unit Twenty Basic Research

Document Code:lw-179979

Volume:109

Issue:21

Page Number:213503

Translation or Not:no

Date of Publication:2016-11-22

Pre One:Decoupled scenario between the conductive carriers and the ferromagnetism in epitaxial Zn0.852xMgxCo0.15O thin films

Next One:Room temperature electrically tunable rectification magnetoresistance in Ge-based Schottky devices