Paper Publications

Home >> Scientific Resear... >> Paper Publication...

Microstructure Evolution and Electrical Behaviors for HighPerformance Cu2O/Zr-Doped β？Ga2O3 Heterojunction Diode

Release time:2025-05-26|Hits:

Affiliation of Author(s):材料科学与工程学院

Journal:ACS Applied Materials and Interfaces

First Author:姜江一鸣

Document Code:D92F854ADE26435097C6E43051581FDB

Issue:16

Number of Words:5

Translation or Not:no

Date of Publication:2024-07-20

Next One:
Zr-Doping Strategy of High-Quality Cu2O/β-Ga2O3 Heterojunction for Ultrahigh-Performance Solar-Blind Ultraviolet Photodetection

中文    |   MOBILE Version   |   Login SDU   

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University

Click: Times

The Open Time: --

The Last Update Time: --