Title : Piezopotential gated two-dimensional InSe field-effect transistor for designing a pressure sensor based on piezotronic effect
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Affiliation of Author(s):晶体材料研究院
Title of Paper:Piezopotential gated two-dimensional InSe field-effect transistor for designing a pressure sensor based on piezotronic effect
Journal:Nano Energy
First Author:王孚雷
Indexed by:Unit Twenty Basic Research
Document Code:2293F9C42D2445F3952DAA5479EBB20D
Volume:70
Number of Words:5
Translation or Not:no
Date of Publication:2020-04-01
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