Theoretical study on the electronic structures and transport properties of Ti32-xHfxNi32Sn32-ySby half-Heusler compounds
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所属单位：物理学院
发表刊物：PHYSICA B-CONDENSED MATTER
关键字：Density functional theory;Electronic structure;Energy gap;Narrow band gap semiconductors;Semiconductor doping;Statistical mechanics;Ternary alloys;Transport properties;Half-Heusler;TiNiSn;Thermoelectric;Transport;Electrical conductivity;Seebeck coefficient
第一作者：赵兰玲
论文编号：1395293332992692225
卷号：596
期号：596
页面范围：412385
字数：6
是否译文：否
发表时间：2020-01-11
发表时间：2020-01-11