wangqingpu

Doctor

With Certificate of Graduation for Doctorate Study

山东大学

Personal Information:

Gender:Male
Date of Employment:1987-07-01
Business Address:高新区软件校区微电子学院3B202室
E-Mail:wangqingpu@sdu.edu.cn

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TDDB characteristic and breakdown mechanism of ultra-thin SiO2/HfO2 bilayer gate dielectrics

Date of Publication:2014-06-01 Hits:

Affiliation of Author(s):信息科学与工程学院
Journal:Journal of Semiconductors
First Author:wangqingpu
Indexed by:Applied Research
Document Code:lw-153554
Volume:35
Issue:6
Page Number:064003-1
Translation or Not:no
Date of Publication:2014-06-01

Pre One:Characteristics of sputtered Y-doped IZO thin films and devices

Next One:The effects of selenization temperature on the properties of CIGS thin film prepared by Cu-In-Ga-Se precursors. Advanced Materials Research Vol. 528 (2012) pp 214-218.

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