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山东大学

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Date of Employment:1987-07-01
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Highly Optimized Complementary Inverters Based on p-SnO and n-InGaZnO With High Uniformity

Release Time:2019-04-14 Hits:

Institution:微电子学院
Journal:IEEE Electron Device Letters
First Author:杨进
All the Authors:辛倩,王一鸣,周莉,王卿璞,Song A M
Document Code:380A7EA0D0E84282A8B90E41FA3EADCD
Volume:39
Issue:4
Page Number:516
Translation or Not:No
Date of Publication:2018-04

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