山东大学教师主页王卿璞 TDDB characteristic and breakdown mechanism of ultra-thin SiO2/HfO2 bilayer gate dielectrics Home

TDDB characteristic and breakdown mechanism of ultra-thin SiO2/HfO2 bilayer gate dielectrics

Release Time:2019-10-24 Hits:

Institution:信息科学与工程学院
Journal:Journal of Semiconductors
First Author:王卿璞
Document Code:lw-153554
Volume:35
Issue:6
Page Number:064003-1
Translation or Not:No
Date of Publication:2014-06

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TDDB characteristic and breakdown mechanism of ultra-thin SiO2/HfO2 bilayer gate dielectrics