CKviYVGxtHAEY1vGKjUkbRrRfTXmjdLBajJ5oeGni6ItnYTGmfSO2TfwTLbJ
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山东大学

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Highly Optimized Complementary Inverters Based on p-SnO and n-InGaZnO With High Uniformity

Release Time:2019-10-24 Hits:

Institution:集成电路学院
Journal:IEEE Electron Device Letters
First Author:杨进
All the Authors:王卿璞,Song A M,辛倩,王一鸣,周莉
Document Code:380A7EA0D0E84282A8B90E41FA3EADCD
Volume:39
Issue:4
Page Number:516
Number of Words:4
Translation or Not:No
Date of Publication:2018-03

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