wangqingpu

Doctor

With Certificate of Graduation for Doctorate Study

山东大学

Personal Information:

Gender:Male
Date of Employment:1987-07-01
Business Address:高新区软件校区微电子学院3B202室
E-Mail:wangqingpu@sdu.edu.cn

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Highly Optimized Complementary Inverters Based on p-SnO and n-InGaZnO With High Uniformity

Date of Publication:2018-04-01 Hits:

Affiliation of Author(s):微电子学院
Journal:IEEE Electron Device Letters
All the Authors:xinqian,Yiming Wang,Zhou Li,wangqingpu,Song A M
First Author:杨进
Indexed by:Unit Twenty Basic Research
Document Code:380A7EA0D0E84282A8B90E41FA3EADCD
Volume:39
Issue:4
Page Number:516
Translation or Not:no
Date of Publication:2018-04-01

Pre One:Ambipolar SnOx thin-film transistors achieved at high sputtering power

Next One:Effects of substrate and anode metal annealing on InGaZnO Schottky diodes

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