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TDDB characteristic and breakdown mechanism of ultra-thin SiO2/HfO2 bilayer gate dielectrics

Release Time:2019-11-06 Hits:

Institution:集成电路学院
Journal:Journal of Semiconductors
First Author:王卿璞
All the Authors:王卿璞
Document Code:lw-153554
Volume:35
Issue:6
Page Number:64003
Number of Words:5
Translation or Not:No
Date of Publication:2014-01

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