Piezopotential gated two-dimensional InSe field-effect transistor for designing a pressure sensor based on piezotronic effect
发布时间：2022-01-18 点击数：
所属单位：晶体材料研究院（晶体材料全国重点实验室）
论文名称：Piezopotential gated two-dimensional InSe field-effect transistor for designing a pressure sensor based on piezotronic effect
发表刊物：NANO ENERGY
第一作者：王孚雷
论文编号：2293F9C42D2445F3952DAA5479EBB20D
卷号：70
字数：5
是否译文：否
发表时间：2020-04
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