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Low-temperature solution-processed InGaZnO thin film transistors by using lightwave-derived annealing

Release Time:2021-09-19 Hits:

Institution:材料科学与工程学院
Journal:Thin Solid Films
First Author:张倩
Document Code:D5C5B3E4DB9B4AAE8A488F7C40F1A245
Volume:723
Issue:0
Number of Words:5
Translation or Not:No
Date of Publication:2021-04

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