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Institution:集成电路学院
Title of Paper:Achieving high performance Ga2O3 diodes by adjusting chemical composition of tin oxide Schottky electrode
Journal:Semiconductor Science and Technology
First Author:辛倩
All the Authors:Xutang Tao,Song A M,徐明升,Wenxiang Mu,Zhitai Jia,王鑫煜,辛公明,辛倩
Document Code:343681EE28154666B317A53CC22C80CE
Issue:34
Number of Words:4500
Translation or Not:No
Date of Publication:2019-06
Release Time:2019-10-25