Low voltage operation of IGZO thin film transistors enabled by ultrathin Al2O3 gate dielectric
Release Time:2019-04-14
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- Institution:
- 微电子学院
- Title of Paper:
- Low voltage operation of IGZO thin film transistors enabled by ultrathin Al2O3 gate dielectric
- Journal:
- Applied physics letters
- First Author:
- 马鹏飞
- All the Authors:
- 王一鸣,辛倩,Li Yuxiang,Song A M
- Document Code:
- CC8950350E17457388301840E2318F53
- Volume:
- 112
- Issue:
- 2
- Translation or Not:
- No
- Date of Publication:
- 2018-01
- Release Time:
- 2019-04-14