Schottky-barrier thin-film transistors based on HfO2-capped InSe
Release Time:2019-10-25
Hits:
- Institution:
- 集成电路学院
- Title of Paper:
- Schottky-barrier thin-film transistors based on HfO2-capped InSe
- Journal:
- APPLIED PHYSICS LETTERS
- First Author:
- 辛倩
- All the Authors:
- Song A M,王一鸣,Shi Yanpeng,Yifei Philip Zhang,辛倩
- Document Code:
- 7B2AFA27B7F54882ACFDC3B4111227BF
- Volume:
- 115
- Issue:
- 1
- Number of Words:
- 4500
- Translation or Not:
- No
- Date of Publication:
- 2019-07
- Release Time:
- 2019-10-25