Schottky-barrier thin-film transistors based on HfO2-capped InSe
Release time:2019-10-25
Hits:
- Affiliation of Author(s):
- 集成电路学院
- Journal:
- APPLIED PHYSICS LETTERS
- All the Authors:
- xinqian,Song A M,Yiming Wang,Shi Yanpeng,Philip Zhang
- First Author:
- 辛倩
- Document Code:
- 7B2AFA27B7F54882ACFDC3B4111227BF
- Volume:
- 115
- Issue:
- 1
- Number of Words:
- 4500
- Translation or Not:
- no
- Date of Publication:
- 2019-07-16