Extremely high-gain source-gated transistors
Release Time:2021-10-09
Hits:
- Institution:
- 集成电路学院
- Title of Paper:
- Extremely high-gain source-gated transistors
- Journal:
- PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
- First Author:
- 张嘉炜
- Document Code:
- 5837A7A20E1B44CE944CC0C0DB87B0CB
- Volume:
- 116
- Issue:
- 11
- Page Number:
- 4843
- Number of Words:
- 5000
- Translation or Not:
- No
- Date of Publication:
- 2019-03
- Release Time:
- 2021-10-09