Charge-trapping memory based on tri-layer alumina gate stack and InGaZnO channel
Release time:2022-01-18
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- Affiliation of Author(s):
- 微电子学院
- Journal:
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- First Author:
- 马鹏飞
- Indexed by:
- Unit Twenty Basic Research
- Document Code:
- 419298800B7E4787B96E7EF0679BE71C
- Volume:
- 35
- Issue:
- 5
- Number of Words:
- 5000
- Translation or Not:
- no
- Date of Publication:
- 2020-05-01