Charge-trapping memory based on tri-layer alumina gate stack and InGaZnO channel
Release Time:2022-01-18
Hits:
- Institution:
- 集成电路学院
- Title of Paper:
- Charge-trapping memory based on tri-layer alumina gate stack and InGaZnO channel
- Journal:
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- First Author:
- 马鹏飞
- Document Code:
- 419298800B7E4787B96E7EF0679BE71C
- Volume:
- 35
- Issue:
- 5
- Number of Words:
- 5000
- Translation or Not:
- No
- Date of Publication:
- 2020-05
- Release Time:
- 2022-01-18