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Comparative Study of Short-Channel Effects Between Source-Gated Transistors and Standard Thin-Film Transistors

Release time:2022-05-24
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Affiliation of Author(s):
集成电路学院
Journal:
IEEE Transactions on Electron Devices
First Author:
王震泽
Document Code:
EE891ACF871F4DC799BF2F59A5BD422D
Issue:
69
Number of Words:
3000
Translation or Not:
no
Date of Publication:
2022-01-13