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Comparative Study of Short-Channel Effects Between Source-Gated Transistors and Standard Thin-Film Transistors

Release Time:2022-05-24
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Institution:
集成电路学院
Title of Paper:
Comparative Study of Short-Channel Effects Between Source-Gated Transistors and Standard Thin-Film Transistors
Journal:
IEEE Transactions on Electron Devices
First Author:
王震泽
Document Code:
EE891ACF871F4DC799BF2F59A5BD422D
Volume:
69
Issue:
2
Page Number:
561
Number of Words:
3000
Translation or Not:
No
Date of Publication:
2022-01
Release Time:
2022-05-24