Comparative Study of Short-Channel Effects Between Source-Gated Transistors and Standard Thin-Film Transistors
Release Time:2022-05-24
Hits:
- Institution:
- 集成电路学院
- Title of Paper:
- Comparative Study of Short-Channel Effects Between Source-Gated Transistors and Standard Thin-Film Transistors
- Journal:
- IEEE Transactions on Electron Devices
- First Author:
- 王震泽
- Document Code:
- EE891ACF871F4DC799BF2F59A5BD422D
- Volume:
- 69
- Issue:
- 2
- Page Number:
- 561
- Number of Words:
- 3000
- Translation or Not:
- No
- Date of Publication:
- 2022-01
- Release Time:
- 2022-05-24

