Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions
Release Time:2023-11-02
Hits:
- Institution:
- 集成电路学院
- Title of Paper:
- Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions
- Journal:
- IEEE Transactions on Electron Devices
- Document Code:
- A463292AAD9345A8873E96D117A76844
- Issue:
- 4
- Page Number:
- 1377
- Number of Words:
- 5000
- Translation or Not:
- No
- Date of Publication:
- 2018-03
- Release Time:
- 2023-11-02