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Light-Triggered Anti-ambipolar Transistor Based on an In-Plane Lateral Homojunction

Release time:2024-11-20
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Affiliation of Author(s):
集成电路学院
Journal:
纳米快报
First Author:
韩鹤程
Document Code:
AC4C4AF29C1B4ED1A61F3CCC59D70707
Volume:
24
Issue:
28
Page Number:
8602
Number of Words:
6
Translation or Not:
no
Date of Publication:
2024-07-10