Title:一种边际氮空位g-C3N4光催化剂及其制备方法
Institution:晶体材料研究院（晶体材料全国重点实验室）
Type of Patent:Invent
Application Number:201811542204.2
Number of Inventors:8
Service Invention or Not:No
Application Date:2018-12-17
Publication Date:2020-06-02
Authorization Date:2020-06-02
Release Time:2019-04-15