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Solid-State Optoelectronic Synapse Transistor Using a LaF3 Gate Dielectric

Release Time:2022-12-24
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Institution:
物理学院
Title of Paper:
Solid-State Optoelectronic Synapse Transistor Using a LaF3 Gate Dielectric
Journal:
Physica Status Solidi - Rapid Research Letters
First Author:
石鹏
Document Code:
C8FB575592E44556ABC1B2E681D0D14B
Issue:
16
Number of Words:
5
Translation or Not:
No
Date of Publication:
2022-08
Release Time:
2022-12-24