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Tunable Schottky contacts in MSe2/NbSe2 (M = Mo and W) heterostructures and promising application potential in field-effect transistors
2018-01-21  Hits:

Affiliation of Author(s):物理学院
Journal:Physical chemistry chemical physics
All the Authors:Wei Wei,Huang Baibiao,Dai Ying
First Author:吕兴帅
Indexed by:Unit Twenty Basic Research
Document Code:C16D0CDCADC84B67BA63D61715CB7441
Volume:20
Issue:3
Page Number:1897
Translation or Not:no
Date of Publication:2018-01-21
Date of Publication:2018-01-21

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