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Tunable Schottky contacts in MSe2/NbSe2 (M = Mo and W) heterostructures and promising application potential in field-effect transistors
Release Time:2019-10-25| Hits:

Institution:物理学院
Title of Paper:Tunable Schottky contacts in MSe2/NbSe2 (M = Mo and W) heterostructures and promising application potential in field-effect transistors
Journal:Physical chemistry chemical physics
First Author:吕兴帅
All the Authors:魏巍,Huang Baibiao,Dai Ying
Document Code:C16D0CDCADC84B67BA63D61715CB7441
Volume:20
Issue:3
Page Number:1897
Number of Words:5
Translation or Not:No
Date of Publication:2018-01
Release Time:2019-10-25