Paper Publications

Home >> Scientific Resear... >> Paper Publication...

Porosity-induced relaxation of strains at different depth of nanoporous GaN stuided using the Z-scan of Raman spectroscopy

Release time:2019-10-24|Hits:

Affiliation of Author(s):物理学院

Journal:JOURNAL OF ALLOYS AND COMPOUNDS

All the Authors:xiaohongdi,Ji Ziwu,Ma Jin

First Author:xiaohongdi

Document Code:lw-167315

Volume:626

Page Number:154

Number of Words:2500

Translation or Not:no

Date of Publication:2015-01-01

Pre One:
Porosity-induced relaxation of strains at different depth of nanoporous GaN stuided using the Z-scan of Raman spectroscopy
Next One:
Preparation and properties of mixed metal oxides based layered double hydroxide as anode materials for dye-sensitized solar cell

中文    |   MOBILE Version   |   Login SDU   

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University

Click: Times

The Open Time: --

The Last Update Time: --