Anodic etching of GaN based film with a strong phase-separated InGaN/GaN layer: Mechanism and properties

Release time:2019-10-24|Hits:

Affiliation of Author(s):集成电路学院

Journal:Applied Surface Science

All the Authors:xiaohongdi,Jianqiang Liu,Ma Jin

First Author:xiaohongdi

Document Code:lw-185722

Volume:387

Page Number:406

Number of Words:4

Translation or Not:no

Date of Publication:2016-07-13