Affiliation of Author(s):新一代半导体材料研究院
Journal:CRYSTENGCOMM
First Author:刘磊
Document Code:C3867FFABC184F9BB1BBACD5493F69E6
Volume:23
Issue:41
Page Number:7245
Translation or Not:no
Date of Publication:2021-10-25
xiaohongdi
Professor
工学博士，教授，主要研究方向为宽带隙半导体材料与器件。主持国家自然科学基金项目2项，山东省科技攻关、山东省自然科学基金等省部级项目8项，申请国家发明专利5项，发表SCI收录论文百余篇，他引千余次；作为第一或通讯作者在Nanoscale、Applied Surface Science、Ceramics International、Applied Physics Letters等期刊发表SCI论文70余篇；受邀担任Advanced Materials，Applied Physics Letters，Applied Surface Science 等著名期刊的审稿人；获中国电子学会优秀硕士论文指导教... More+
Paper Publications
Fabrication of a 2 inch free standing porous GaN crystal film and application in the growth of relaxed crack-free thick GaN
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