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Self-powered deep ultraviolet PIN photodetectors with excellent response performance based on Ga2O3 epitaxial films grown on p-GaN

Release time:2024-01-10|Hits:

Affiliation of Author(s):集成电路学院

Journal:APPLIED PHYSICS LETTERS

First Author:陈蓉蓉

Document Code:727931AB20E8481DB4CC52AC087B1B44

Issue:123

Number of Words:3

Translation or Not:no

Date of Publication:2023-08-21

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Vertical nanoporous GaN substrates for photonic engineering: Lu2O3:Eu single crystal thin films as an example

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