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Gate‐Tunable Circular Photogalvanic Effects in Two‐dimensional Perovskite Ferroelectric‐based Transistor toward Multi‐state Memory

Release Time:2025-09-12| Hits:

Title of Paper:Gate‐Tunable Circular Photogalvanic Effects in Two‐dimensional Perovskite Ferroelectric‐based Transistor toward Multi‐state Memory

Journal:Angewandte Chemie International Edition

Volume:64

Page Number:e202421463

Impact Factor:16.6

Translation or Not:No

Date of Publication:2025-03

Included Journals:SCI

Release Time:2025-09-12

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