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Nucleation mechanism of GaN crystal growth on porous GaN/sapphire substrates
Release Time:2022-05-15| Hits:
Institution:晶体材料研究院（晶体材料全国重点实验室）
Title of Paper:Nucleation mechanism of GaN crystal growth on porous GaN/sapphire substrates
Journal:CrystEngComm
First Author:刘磊
Document Code:DA60497533284E7981D34A73964DAA73
Issue:24
Page Number:1840
Number of Words:5000
Translation or Not:No
Date of Publication:2022-02
Release Time:2022-05-15
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