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Bandgap, Mobility, Dielectric Constant, and Baliga's Figure of Merit of 4H-SiC, GaN, and β-Ga2O3from 300 to 620 K

Release time:2023-12-13|Hits:

Affiliation of Author(s):前沿交叉科学青岛研究院

Journal:ACS Applied Electronic Materials

First Author:Cheng, Lu

Document Code:1580372811448872962

Volume:4

Issue:8

Page Number:4140-4145

Number of Words:5

Translation or Not:no

Date of Publication:2022-08-23

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First-principles study of thermal transport properties in ferroelectric HfO2 and related fluorite-structure ferroelectrics
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Intrinsic electron mobility and lattice thermal conductivity of β-Si<sub>3</sub>N<sub>4</sub> from first-principles

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