Engineered interface states and optical absorption of β-Ga2O3/4H-SiC heterojunctions by irradiation-induced oxygen defects from first-principles

Release time:2025-05-17|Hits:

Affiliation of Author(s):核科学与能源动力学院

Journal:Journal of Materials Chemistry C

First Author:张校宁

Document Code:1793128394293780482

Number of Words:5

Translation or Not:no

Date of Publication:2024-02-06