Patents

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Title:

磁性增强的H掺杂MNXGE1-X磁性半导体薄膜

Affilication of Author(s):

物理学院

Patent Applicant:

yanshishen

Disigner of the Invention:

梅良模,Yanxue Chen,liuguolei,meiliangmo

Type of Patent:

发明

Application Number:

200810014729.9

Number of Inventors:

4

Service Invention or Not:

no

Application Date:

2008-03-07

Publication Date:

2010-06-09

Authorization Date:

2008-03-07

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