Title : 磁性增强的H掺杂MNXGE1-X磁性半导体薄膜
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Title:磁性增强的H掺杂MNXGE1-X磁性半导体薄膜
Affilication of Author(s):物理学院
Patent Applicant:yanshishen
Disigner of the Invention:梅良模,Yanxue Chen,liuguolei,meiliangmo
Type of Patent:发明
Application Number:200810014729.9
Number of Inventors:4
Service Invention or Not:no
Application Date:2008-03-07
Publication Date:2010-06-09
Authorization Date:2008-03-07
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