Title:一种高质量氧化镓晶片的制备方法与应用
Institution:晶体材料研究院（晶体材料全国重点实验室）
Type of Patent:Invent
Application Number:201611078605.8
Number of Inventors:5
Service Invention or Not:No
Application Date:2016-11-30
Publication Date:2020-04-17
Authorization Date:2020-04-17
Release Time:2022-11-16