Title : Toward High Bias-Stress Stability P-Type GaSb Nanowire Field-Effect-Transistor for Gate-Controlled Near-Infrared Photodetection and Photocommunication

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Affiliation of Author(s):物理学院

Title of Paper:Toward High Bias-Stress Stability P-Type GaSb Nanowire Field-Effect-Transistor for Gate-Controlled Near-Infrared Photodetection and Photocommunication

Journal:Advanced functional materials

Document Code:314C533916B0444396DED0A623634621

Issue:2304064

Number of Words:4

Translation or Not:no

Date of Publication:2023-05-25