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Institution:信息科学与工程学院

Title of Paper:An InGaP/GaAs HBT MIC power amplifier with power combining at the X-band

Journal:Chinese Journal of Semiconductors

First Author:陈延湖

All the Authors:袁东风

Document Code:lw-100434

Volume:0

Issue:0

Translation or Not:No

Date of Publication:2008-11

Release Time:2019-04-14