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    A new direct growth method of graphene on Si-face of 6H-SiC by synergy of the inner and external carbon sources

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    • Institution:晶体材料研究所

    • Title of Paper:A new direct growth method of graphene on Si-face of 6H-SiC by synergy of the inner and external carbon sources

    • Journal:Applied surface science

    • First Author:杨志远

    • All the Authors:王正平,陈秀芳,程秀凤,于法鹏,赵显

    • Document Code:52E6FC05C98647D482816D6BCC2F25D3

    • Volume:436

    • Page Number:511

    • Translation or Not:No

    • Date of Publication:2018-04

    • Release Time:2019-04-14
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