中文

A New Direct Growth of High Quality Graphene on Si-face of 6H-SiC by Inner and External Carbon Sources Catalyzed by Nickel

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  • Affiliation of Author(s):晶体材料研究所

  • All the Authors:zhaoxian,chenxiufang,chengxiufeng,xuxiangang,wangzhengping

  • First Author:Yu Fapeng

  • Indexed by:Unit Twenty Basic Research

  • Document Code:A81351E1E5DF47C988FEBF9BDA94AABA

  • Translation or Not:no

  • Date of Publication:2017-11-01

  • Date of Publication:2017-11-01

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