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    A New Direct Growth of High Quality Graphene on Si-face of 6H-SiC by Inner and External Carbon Sources Catalyzed by Nickel

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    • Institution:晶体材料研究院（晶体材料全国重点实验室）

    • Title of Paper:A New Direct Growth of High Quality Graphene on Si-face of 6H-SiC by Inner and External Carbon Sources Catalyzed by Nickel

    • Journal:2017 14th China International Forum on Solid State Lighting

    • First Author:于法鹏

    • All the Authors:陈秀芳,程秀凤,徐现刚,王正平,赵显,于法鹏

    • Document Code:A81351E1E5DF47C988FEBF9BDA94AABA

    • Translation or Not:No

    • Date of Publication:2017-11

    • Release Time:2019-10-25
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