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    A new direct growth method of graphene on Si-face of 6H-SiC by synergy of the inner and external carbon sources

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    • Institution:光学高等研究中心

    • Title of Paper:A new direct growth method of graphene on Si-face of 6H-SiC by synergy of the inner and external carbon sources

    • Journal:Applied Surface Science

    • First Author:杨志远

    • All the Authors:陈秀芳,程秀凤,于法鹏,赵显,王正平

    • Document Code:933DA7737B734D6781868FA1A9EAAED6

    • Translation or Not:No

    • Date of Publication:2018-04

    • Release Time:2019-10-25
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