中文

一种调控腔体压强制备高质量单晶畴二维材料的方法

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  • Affilication of Author(s):晶体材料研究院

  • Type of Patent:发明

  • Application Number:202111288448.4

  • Number of Inventors:4

  • Service Invention or Not:no

  • Application Date:2021-11-02

  • Publication Date:2022-08-30

  • Authorization Date:2022-08-30

  • Publication Date:2022-08-30

  • Application Date:2021-11-02

  • Authorization Date:2022-08-30

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