A New Direct Growth of High Quality Graphene on Si-face of 6H-SiC by Inner and External Carbon Sources Catalyzed by Nickel
发布时间：2019-10-25 点击数：
所属单位：晶体材料研究院（晶体材料全国重点实验室）
论文名称：A New Direct Growth of High Quality Graphene on Si-face of 6H-SiC by Inner and External Carbon Sources Catalyzed by Nickel
发表刊物：2017 14th China International Forum on Solid State Lighting
第一作者：于法鹏
全部作者：陈秀芳,程秀凤,徐现刚,王正平,赵显,于法鹏
论文编号：A81351E1E5DF47C988FEBF9BDA94AABA
是否译文：否
发表时间：2017-11