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Gender:Male
School/Department:晶体材料研究院（晶体材料全国重点实验室）
Date of Employment:2008-07
College: Institute of Crystal Materials
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基于宽禁带半导体碳化硅晶体的光参量振荡激光器

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Title:基于宽禁带半导体碳化硅晶体的光参量振荡激光器

Institution:晶体材料研究所

Type of Patent:发明

Application Number:201310400907.2

Number of Inventors:6

Service Invention or Not:No

Application Date:2013-09-05

Publication Date:2015-12-23

Authorization Date:2013-09-05

Release Time:2018-07-04

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