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Gender:Male
School/Department:晶体材料研究院（晶体材料全国重点实验室）
Date of Employment:2008-07
College: Institute of Crystal Materials
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以可饱和吸收体作为选频和调Q元件的双波长激光器及应用

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Title:以可饱和吸收体作为选频和调Q元件的双波长激光器及应用

Institution:晶体材料研究所

Type of Patent:发明

Application Number:200910013894.7

Number of Inventors:12

Service Invention or Not:No

Application Date:2009-01-21

Publication Date:2012-01-04

Authorization Date:2009-01-21

Release Time:2018-07-04

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