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Impact of Density of States on the Characteristics of Channel-All-Around InGaZnO Field-Effect Transistors
  • Affiliation of Author(s):
    信息科学与工程学院
  • Journal:
    IEEE Transactions on Electron Devices
  • First Author:
    蔡坤林
  • Document Code:
    64889230866F4871B21D399BDA5D2A22
  • Issue:
    1
  • Number of Words:
    4000
  • Translation or Not:
    no
  • Date of Publication:
    2025-02-02
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