Institution:晶体材料研究院（晶体材料全国重点实验室）
Title of Paper:Preparation and optimization of freestanding GaN using low-temperature GaN layer
Journal:Frontiers of Materials Science
First Author:田媛
All the Authors:张保国,张雷,吴拥中,郝霄鹏,邵永亮
Document Code:2DF14C2A0FF0478F9C1EBCF5EDF06AD8
Volume:13
Issue:3
Page Number:314
Number of Words:3
Translation or Not:No
Date of Publication:2019-05
Release Time:2020-03-20
Gender : Male
School/Department : 晶体材料研究院（晶体材料全国重点实验室）
Date of Employment : 2019-07
Faculty/School : Institute of Crystal Materials
The Last Update Time : ..
