Influence of crystal orientation and incident plane on n-type 4H-SiC wafer slicing by using picosecond laser

发布时间:2024-12-20| 点击次数:

所属单位:新一代半导体材料研究院

论文名称:Influence of crystal orientation and incident plane on n-type 4H-SiC wafer slicing by using picosecond laser

发表刊物:Optics and Laser Technology

第一作者:姚勇平

论文编号:764B6DD20F3D4C4E924F28801FA7D505

期号:Volume182,PartB

字数:5

是否译文:否

发表时间:2024-11

发布时间:2024-12-20