Title : Extremely high-gain source-gated transistors

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Affiliation of Author(s):微电子学院

Title of Paper:Extremely high-gain source-gated transistors

Journal:PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

First Author:张嘉炜

Indexed by:Unit Twenty Basic Research

Document Code:5837A7A20E1B44CE944CC0C0DB87B0CB

Volume:116

Issue:11

Page Number:4843

Number of Words:5000

Translation or Not:no

Date of Publication:2019-03-12