Title : Enhancement-mode Ga2O3 FET with high mobility using p-type SnO heterojunction

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Affiliation of Author(s):微电子学院

Title of Paper:Enhancement-mode Ga2O3 FET with high mobility using p-type SnO heterojunction

Journal:IEEE Electron Device Letters

Key Words:Alumina;Aluminum oxide;Field effect transistors;Gallium compounds;Heterojunctions;II-VI semiconductors;Nanosheets;Semiconducting indium compounds;Zinc oxide;Back channels;Filed-effect-transistor;Gallium oxide (ga2o3);High mobility;Mobility (μ);Mode operation;Nano sheet;P-n heterojunctions;p-Type SnO;Threshold voltage (VTH);Gallium oxide (Ga2O3);filed-effecttransistors (FETs);heterojunction;threshold voltage (V-TH);p-type SnO;mobility (mu)

First Author:王珣珣

Document Code:1478204783637565441

Volume:43

Issue:1

Page Number:44-47

Number of Words:5

Translation or Not:no

Date of Publication:2022-01-01