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Performance regeneration of InGaZnO transistors with ultra-thin channels

Release time:2019-04-14
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Affiliation of Author(s):
微电子学院
Journal:
Applied physics letters
All the Authors:
wangqingpu
First Author:
Xijian Zhang
Indexed by:
Unit Twenty Basic Research
Document Code:
lw-168482
Volume:
106
Issue:
9
Page Number:
093506
Translation or Not:
no
Date of Publication:
2015-03-01