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Performance regeneration of InGaZnO transistors with ultra-thin channels

Release Time:2019-04-14
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Institution:
微电子学院
Title of Paper:
Performance regeneration of InGaZnO transistors with ultra-thin channels
Journal:
Applied physics letters
First Author:
Xijian Zhang
All the Authors:
王卿璞
Document Code:
lw-168482
Volume:
106
Issue:
9
Page Number:
093506
Translation or Not:
No
Date of Publication:
2015-03
Release Time:
2019-04-14