Paper Publications
Photo‐Enhanced Resistive Switching Effect in High‐Performance MAPbI3 Memristors
2022-10-06 Hits:
Affiliation of Author(s):光学高等研究中心
Journal:Advanced Materials Interfaces
First Author:刘泽翰
Document Code:36A0010986584C62BA06F9A556D8BE9D
Issue:2205
Number of Words:4
Translation or Not:no
Date of Publication:2022-10-06
Date of Publication:2022-10-06
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